Wu Hong'e¹， Fei Guangtao²， Yu Shixiong¹， Ma Qingrui¹， Tan Guangcan¹

1.School of Chemical and Environmental Engineering， Anhui Polytechnic University， Wuhu 241000， China； 2.Institute of Solid State Physics， Hefei Institutes of Physical Science， Chinese Academy of Sciences， Hefei 230031， China

Abstract

Significance Due to the intrinsic toxicity and insufficient stability of lead-based halide perovskites， their large-scale application and industrialization are severely limited. Consequently， lead-free perovskite materials have attracted considerable attention as environmentally friendly alternatives. These materials exhibit diverse crystal structures and tunable optoelectronic properties， offering a sustainable pathway toward the development of high-performance and low-toxicity optoelectronic devices.

Progress This review summarizes the recent research progress in the field of lead‑free perovskite materials and systematically introduces their structural classification， synthesis strategies， application status， and future development prospects. First， the classification characteristics of major crystal structure systems， including AB（II）X₃， A₂B（IV）X₆， A₂B（I）B（III）X₆， and A₃B（III）₂X₉， are summarized， and the influence of different constituent elements on morphological structures and photophysical properties is revealed. Second， the main synthesis strategies for current perovskite materials are summarized， including high-temperature hot-injection， high-temperature solid-state， hydrothermal/solvothermal， co-precipitation， ligand-assisted reprecipitation （LARP）， and microwave-assisted synthesis methods. Third， the application progress of lead-free perovskite materials in optoelectronics and energy-related fields is highlighted. In solar cells， stibium-based systems achieve relatively high photoelectric conversion efficiencies， showing great potential， but their operational stability under continuous illumination and ambient conditions remains inferior to that of lead-based devices. In light-emitting diodes （LEDs）， various lead-free systems， including Csbased systems achieve relatively₃Cu₂I₅， Sb³⁺- or Gd³⁺-doped Cs₂AgInCl₆， and rare-earth-doped double perovskites， achieve high photoluminescence quantum yields in some cases， with emission colors spanning from deep blue to near-infrared.

Conclusions and Prospects Although lead-free perovskite materials show broad application prospects in the above fields， they still face core challenges. Insufficient long-term stability， relatively low photoluminescence quantum yield， and a high density of intrinsic defects are the main obstacles to their practical application. Future research should focus on the following aspects： deepening the fundamental understanding of defect chemistry and photophysical mechanisms， especially the nature of trap states and their role in non-radiative recombination； developing new elemental combinations and multidimensional heterostructures to synergistically enhance performance and stability； and developing efficient surface or interface passivation strategies to suppress defects and improve environmental adaptability. With continued innovation in material design， synthesis methods， and device engineering， lead-free perovskite materials are expected to become green and high-performance optoelectronic materials that play a vital role in sustainable energy conversion and environmental protection.

Keywords： lead-free perovskite； perovskite； double perovskite； zero-dimensional perovskite； rare earth doping； photoluminescence； defect chemistry； photophysics； trap states

Get Citation:Wu Hong’e， Fei Guangtao， Yu Shixiong， et al. Research progress on preparation and applications of lead-free perovskite materials［J］. China Powder Science and Technology， 2027， 33（1）： 1-15.

Received：2026-06-11， Revised： 2026-07-13， Online： 2026-09-06。

Funding： The research was supported by the National Natural Science Foundation of China (Grant No. 52503147), Anhui Polytechnic University Talent Cultivation and Research Start-up Fund (Grant No. S022022005), and Provincial College Students’ Innovation and Entrepreneurship Training Program (Grant No. S202510363266).

CLC No.：TQ139.2；TB44

Type Code：A

Serial No.：1008-5548（2027）01-0001-15