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CN 37-1316/TU

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Structure and performance regulation of Mg2+,Zr4+co-doped ZnGa2O4∶Cr3+based near-infrared long persistent luminescence phosphors



XIAHOU Junqing1, XU Siyi1, LIU Xiangyu1, XIE Wenlong2, CAI Yanmei1, LIU Yishui1,XU Jieyu1, CAO Li3, ZHU Qi3, LIU Zongming1

1. School of Material Science and Engineering, University of Jinan, Jinan 250022, China;

2. AECC Shenyang Liming Aero-Engine Co. , Ltd. , Shenyang 110043, China;

3. School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China


Abstract

Objective To address the growing demands for excitation-free optical temperature sensing in modern engineering and anticounterfeiting technologies, it is crucial to improve the persistent luminescence and optical temperature-sensing performance of near-infrared( NIR) long persistent luminescence phosphors, broadening their application scenarios.

Methods The ZnGa2-x(Mg-Zr)xO4∶Cr3+(ZGMZC, x=0-0. 2) NIR long persistent luminescence phosphors were synthesized via a high-temperature solid-state method by co-doping Mg2+and Zr4+into ZnGa2O4∶Cr3+ . A systematic analysis was conducted to investigate the effects of different Mg2+-Zr4+doping amounts on the phase structure, luminescence, and persistent luminescence performance of the ZnGa2O4 system. Moreover, the material’s potential for temperature sensing under natural light excitation was explored.

Results and Discussion The maximum doping amount of Mg2+-Zr4+was 10%. An increase in Mg2+-Zr4+doping content was observed to enlarge the grain size while progressively widening the band gap. After high-temperature calcination, the samples exhibited strong capability for visible light absorption. The Mg2+-Zr4+doping facilitated the formation of anti-site defects, thereby increasing defects in the matrix. Consequently, the R-line emission and its Stokes and anti-Stokes phonon sidebands (PSB)gradually weakened in the emitted light, while the N-line emission gradually strengthened. However, excessive doping enhanced energy transfer between Cr3+and defects, which promoted more non-radiative transitions, causing energy loss and weakened luminescence. Furthermore, as the Mg2+-Zr4+doping amount rose, the sample's persistent luminescence initially increased and then decreased, with the x=0. 05 sample exhibiting the optimal luminescence performance. Under dark conditions, the NIR persistent luminescence of the phosphors was enhanced with increasing temperature.

Conclusion The persistent luminescence performance of NIR phosphors is significantly enhanced through Mg2+-Zr4+co-doping.The synthesized materials exhibit temperature-dependent long persistent luminescence characteristics, which can be effectively charged under natural light and subsequently emit NIR light. The properties indicate their potential as natural light rechargeable materials for optical temperature sensing.

Keywords:near-infrared luminescence; long persistent luminescence phosphors; optical temperature sensing; performance regulation


Get Citation:XIAHOU Junqing, XU Siyi, LIU Xiangyu, et al. Structure and performance regulation of Mg2+,Zr4+co-doped ZnGa2O4∶Cr3+based near-infrared long persistent luminescence phosphors[J]. China Powder Science and Technology, 2025, 31(5): 1−12.

Received: 2025-01-08 .Revised: 2025-05-12,Online: 2025-06-12

Funding Project:国家自然科学基金项目,编号 :52371057。

First Author:夏侯俊卿(1992—),男,博士,研究方向为光功能材料。E-mail:mse_xiahoujq@ujn. edu. cn。

Corresponding Author:朱琦(1983—), 男, 教授,博导,研究研究方向为功能陶瓷材料、腐蚀防护涂层、荧光防伪材料。E-mail:zhuq@smm. neu. edu. cn。

DOI:10.13732/j.issn.1008-5548.2025.05.010

CLC No:TB44            Type Code: A

Serial No:1008-5548(2025)05-0001-12