Luo Yuchang Li Tinghe Zeng Sen

(Shandong Aluminium Corporation,Zibo 250061)

Abstract

The desilicon dynamics of crystal seed capacity surface area at low temperature is studied in this paper,the empirical formula of low temperature desilicon dynamics and the curve education between the content of SiOzand desilicon time are obtained. Also the choice of the crystal seed and it's reuse are discussed. The pole of the crystal seed capacity surface area is increased with the improving of the SiO, metastable concentration. Increasing crystal seed capacity surface area canmake the deslicon speed higher.

Keywords：capacity surface area;desilicon speed;dynamics;crystal seed

DOI：10.13732/j.issn.1008-5548.1998.03.003