ISSN 1008-5548

CN 37-1316/TU

2008年14卷  第2期
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掺钇(Ba,Ca)(Ti,Zr)O3电容器陶瓷抗还原性的研究

Reduction-resistant Properties of (Ba , Ca)(Ti, Zr)OCapacitor Ceramics Doped Yttrium

Doi:10.13732/j.issn.1008-5548.2008.02.003
作者:齐晓敏, 滕元成, 陈 堃, 曾冲盛

摘 要:对掺钇的 (Ba, Ca)(Ti, Zr)O3(BCTZ)电容器陶瓷进行了抗还原 性研究, 研究了不同摩尔分数的钇的掺杂对 BCTZ 电容器陶瓷的介电 性能、显微结构和密度的影响。结果表明, 随着 Y2O3 掺杂量的增加, BCTZ 陶瓷的室温介电常数、介质损耗逐渐减小, 居里温度向低温方 向移动, 同时绝缘电阻率升高, BCTZ 陶瓷抗还原性能提高; Y2O3 的掺 入能够促进 BCTZ 陶瓷的致密化, 并有利于抑制 BCTZ 陶瓷的晶粒生 长。 

关键字:钛酸钡; 抗还原性; 钇; 介电性能

Abstract: The reduction-resistant properties of Y doped (Ba, Ca)(Ti, Zr)O3(BCTZ) ceramics was investigated. The influence of different molar fraction of substitution concentration on dielectric properties, microstruc ture and densification was studied. The results showed that with the in crease of Y2O3 amount the room-temperature dielectric constant and loss decreased, the curie temperature of BCTZ ceramics was shifted to lower temperature and the resulation resistivity increasee gradually, so the re duction-resistant properties of BCTZ ceramics was improved a lot. The densification is effectively accelerated and the grain growth is restrained by adding Y2O3

Keywords: barium titanate; reduction-resistant; yttrium; dielectric properties