ISSN 1008-5548

CN 37-1316/TU

1998年4卷  第3期
<返回第3期

晶种容量表面积的低温脱硅动力学

Desilicon Dynamics of Crystal Seed Capacity Surface Area at Low Temperature

Doi:10.13732/j.issn.1008-5548.1998.03.003
作者:罗玉长,李廷和,曾森

摘要:研究了品种容量表面积的低温脱硅动力学,建立了低温脱硅动力学的经验公式及溶液中SiO2含量与脱硅时间的曲线方程,探索了晶种的选择及品种的循环利用。晶种容量表面积的作用是随溶液中SiO2介稳浓度的升高而增强,又随介稳浓度的降低而减弱。增大晶种容量表面积能加快脱硅速度。

关键词:容量表面积;脱硅速度;动力学;晶种

Abstract: The desilicon dynamics of crystal seed capacity surface area at low temperature isstudied in this paper, the empirical formula of low temperature desilicon dynamics and the curveeducation between the content of SiO, and desilicon time are obtained.Also the choice of the crys-tal seed and it's reuse are discussed.The pole of the crystal seed capacity surface area is increasedwith the improving of the SiO metastable concentration. Increasing crystal seed capacity

surface area can make the desilicon speed higher.

Keywords:capacity surface area;desilicon speed ;dynamics ;crystal seed