摘要：归纳总结了锑掺杂二气化锡(ATO)的导电机理,晶格的氧缺位、5价Sb杂质在SnO2禁带形成施主能级并向导带提供n-型载流于是ATO导电的两种主要机理。从材料的电导率公式出发,定性分析了二氧化锡中掺杂锑的含量存在理论最佳值,根据已有模型计算证明了锑掺杂二氧化锡电导率存在理论上限。掺杂二氧化锡中锑的最佳理论含量为1.49％(质量分数),锑掺杂二氧化锡理论电导率最高为0.2×104(Ω·cm)-1,氧空位对ATO电导率的贡献为0.1392×104(n·cm)-1,大于掺杂电子对ATO电导率的贡献(0.061×104(Ω·cm)-1)。

关键词：锑掺杂二氧化锡;电导率;导电机理;

Abstract: The conducting mechanism of antimony doped tin oxide (ATO) isumed up. Oxygen vacancies and dopants Shs  , supply n-type charge carriesto the conductibiliity of SnO₂ are the two conducting mechanisms. Using theformula of the material's conductibility , it is proved that there rxists the opti-mum content of Sb in ATO. Based on lhe exisitent mode , it is also proved thatthere is a conductibilily upper limil of ATO , the optimum dopant Sb in ATO ist. 49% , thetheory maximum conductibilityof ATO is 0.2×104(Ω·cm)-1 The contribution of the oxygen vacancies to ATO conductibilily is 0.1392×104(n·cm)-1, which is greater than that of the dopant contribution(0.061×104(Ω·cm)-1)

Keywords: antimony dopedtinoxide ; conductibility ; conductingmechanism