摘要：为了研究掺杂BarSr1-xTiO3介电薄膜材料的性能,采用阻抗分析仅等测试方法研究了微量元素钇对Sr0.5Ba0.5-yYyTiO3薄膜介电性能的影响。当Y元素的掺量为0-0.030mol时,相对介电常数εr和tanδ分别为74.2和0.067;最大介电常数温度点Tm(居里温度点)逐渐移向低温;在所测试频率范围内,Y元素的掺量为0.010、0.0150mol(Y2、Y3)时,εr、tanδ均能表现出较好的频散特性。采用XRD、TEM等测试方法分析了薄膜的结构特征。薄膜的矿物组成为四方钙钛矿结构,但Y的溶入改变了晶胞参数的c/a比,减小了薄膜的颗粒尺寸,提高了薄膜的致密度;晶粒的生长为取向一致和无取向生长两种方式。
关键词：SBT介电薄膜材料；介电性能；施主掺杂；结构特征
Abstract:The influences of trace element yttrium (Y) on the dielectricproperties of BarSr1-xTiO3;(SBT,y=0,0.007,0.010,0.015,0.020,0.0250.030 mol) films were studied by means of impedance analyzer to discussthe properties of dopedBarSr1-xTiO3; dielectric flims.The dielectric constant(εr ),dielectric loss (tanα)was improved respectively,for maximum 8 (Curietemperature) moved to lower temperature with the amount of Y increase.Better scattering frequency characteristics appeared for thin films with Yamount 0.010 and 0.015 mol in the scope of test frequency.Themicrostructure of SBT thin films was studied by XRD TEM. Tetragonalperovskit srystal grains existed in SBT thin films ,but the grain size wasdecreased when dopant Y was doped in SBT.The ratios c/a of crystallinecell parameters of SBT was varied,and the density was increaesd, Growthfor crystal grains was orientation or disorder.
Keywords: SBT thin films;dielectric constant ;dielectric loss;Y dopant;characteristic microstructure
