摘 要: 利用化学喷涂工艺在石英管材上制作 SnO₂ 薄膜, 成膜时在石 英管表面和 SnO₂ 薄膜的界面上形成 Si 扩散层, 随着成膜时间、固化 温度的改变, Si 扩散层的厚度不同, 直接影响薄膜电阻率的改变, 严重 制约着薄膜面功率密度的改善。通过对形成 Si 扩散机理的 3 个阶段 的分析, 找出了 Si 扩散的主要因素, 提出了 5 项防止 Si 扩散的控制 措施, 对批量生产和提高薄膜面功率密度有一定的参考作用。 

关键词: 石英管; SnO₂ 薄膜; 面功率密度

Abstract:The SnO₂ film was made on the quartzose pipe by chemic spray, the Si diffused film between quartzose pipe’s surface and SnO₂film was formed. Along with the changes of filmed time and solidified temperature, the Si diffused film’s thickness was different the change of the film’s resistor was affected which restricted the density of surface power’s better. The main factors of Si diffused were found by analyzing three stages of Si diffused mechanism and five controlled measures of preventing Si from diffusing were suggested, which had some reference values in mass-producing and improving density of surface power. 

Keywords: quartz pipe; SnO₂ film; density of surface power