摘要：研究不同粒度分布的碳化硅磨料对线切割硅片表面损伤的影响,利用激光粒度仪和扫描电镜对切割前后碳化硅粒径的变化及切割后硅片的形貌进行表征,通过实际切割过程分析,指出粒度分布不均引起的局部切割堵塞而导致的垂直于切割方向的左右侧滑振动,是导致表面损伤的主要原因。结果表明:当碳化硅的粒度分布窄时,线切割硅片表面损伤层浅,表面粗糙度小。

关键词： 磨料；碳化硅；粒径分布；线切割

Abstract：The influence of different size distribution of SiC particles on the wafer surface damage was investigated by means of the technique of laser particle analyzer and scanning electron microscope （SEM）. The analysis by actually cutting process indicated that the silicon wafer surface damage primarily resulted from side-to-side vibrations， which was caused by partial different size distribution of particles cutting block. The experiments showed that the distributions concentrated of SiC granularity made fewer surface rough and damage thickness in silicon wafers. 

Keywords：grinding materials； carborundum； particle size distribution； wire saw